Welcome to the official website of FOLYSKY(WuHan) LTD.!
         |   ENG
FOLYSKY(WuHan) LTD.
hotline:
027-88111056
technical:
13387504731
News Center
News Center
current location > News Center > News
News Center
FOLYSKY(WuHan) LTD.
Address:
Room 8004, Block A, Building 1, Guanggu Science and Technology Port
Follow us:
Contact Us
  • cell phone:13387504731
  • wechat:yjqp3344
  • email:market@folysky.com
High power semiconductor with good heat resistance on aluminum nitride substrate
Release time:2021-04-10 11:19:34  Author:富力天晟  Reading volume:274

In the market, there are two kinds of ceramic substrates: alumina ceramic substrate and aluminum nitride ceramic substrate. With their mature manufacturing process and excellent performance, they are widely used in daily necessities and industrial manufacturing. However, the two are very different, in the thermal conductivity of aluminum nitride ceramics is 7-10 times that of alumina ceramics, so for high-power semiconductors with high heat dissipation requirements, aluminum nitride ceramic substrates are the first choice, which is also the secret that they are not afraid of "heat".


氮化铝基板中能很好抗热的大功率半导体

In recent years, the development of semiconductors is very rapid, and according to the statistics of the World Semiconductor Trade Statistics Organization (WSTS), the global semiconductor market sales exceeded 400 billion US dollars for the first time in 2018, reaching 412.221 billion US dollars, an increase of 21.6%. As a hot power semiconductor, VCSEL chips and IGBT are not to mention. They have a wide range of applications in household appliances, rail transit, power engineering, renewable energy and smart grids.

However, both of these requirements for heat dissipation are very high. Because the IGBT components in today's high-power IGBT modules usually adopt a trench grid structure. Compared with the planar gate structure, the trench gate structure usually adopts 1μm processing accuracy, expands the surface area without changing the volume, and can place more fine components to meet the requirements of higher intelligence. But in this way, the component density will be increased, and the heat is very serious during work. Therefore, the thermal conductivity is 170 ~ 230 W/m.k, and the aluminum nitride ceramic substrate with a more matching thermal expansion coefficient with the silicon chip is a good choice. Not only solve the heat dissipation problem, but also reduce the risk of welding.

As for VCSEL, aluminum nitride ceramic substrate is more needed. Its power density is very high, can reach hundreds of watts per square centimeter, or even more than kilowatts. Such a high power density will not only cause heat dissipation problems, but also cause stress problems caused by the expansion of the chip and the substrate due to thermal effects. And VCSEL will encounter some harsh external environment such as strong acid and alkali in some industrial automation fields, and its chip must be very precise in intelligent automation, so it is necessary to use vacuum packaging to avoid chip failure due to external environment. The three-dimensional aluminum nitride ceramic substrate manufactured by Sliton DPC technology can solve these problems well, that is, the substrate is made into a three-dimensional chamber shape and the lens is mounted above the chip. It not only solves the problem of heat dissipation and stress, but also isolates the harm of external environment corrosion.

It is precisely because of the aluminum nitride ceramic substrate that those high-power semiconductors can continue to glow and heat in various industries, and do not have to worry about which day is broken due to excessive heat, bringing people a more convenient and high-quality experience.


Skype
contact information
contacts:Mr. Hu
E-mail:market@folysky.com
cell phone:13387504731
Company address:Jiangxia District, Wuhan City

Follow us

customer service

FOLYSKY(WuHan) LTD. Copyright © 2016 all rights reserved  备案号:鄂ICP备17008273号-1